Chemical vapor deposition of rough-morphology silicon films over a broad temperature range

Growth of rough polycrystalline silicon films has been achieved on SiO2 surfaces over a broad temperature range (≥100 °C) using SiH4 chemical vapor deposition at low pressures (mTorr range), with smaller grain structure and roughness length scale achieved at lower temperatures. Rough morphology over...

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Bibliographic Details
Published in:Applied physics letters 1993-09, Vol.63 (10), p.1387-1389
Main Authors: DANA, S. S, ANDERLE, M, RUBLOFF, G. W, ACOVIC, A
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Growth of rough polycrystalline silicon films has been achieved on SiO2 surfaces over a broad temperature range (≥100 °C) using SiH4 chemical vapor deposition at low pressures (mTorr range), with smaller grain structure and roughness length scale achieved at lower temperatures. Rough morphology over a broad temperature range is attributed to the combination of nucleation-controlled initial growth (on SiO2) and domination of growth by surface reaction (cf. gas phase).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109685