Low temperature synthesis and properties of lithium niobate thin films

Thin films of lithium niobate were deposited on silicon (100) by a sol-gel technique and were annealed in oxygen at 400 °C. The annealed films were characterized by x-ray diffraction and transmission electron microscopy which showed crystallization to LiNbO3, a preferred orientation of the films, an...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1993-09, Vol.63 (10), p.1331-1333
Main Authors: JOSHI, V, ROY, D, MECARTNEY, M. L
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric thin films
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c320t-285b47b98eb55ce92f4bd40e15bd6f42dd8fe35be63273148a1e749ba3c7da93
cites cdi_FETCH-LOGICAL-c320t-285b47b98eb55ce92f4bd40e15bd6f42dd8fe35be63273148a1e749ba3c7da93
container_end_page 1333
container_issue 10
container_start_page 1331
container_title Applied physics letters
container_volume 63
creator JOSHI, V
ROY, D
MECARTNEY, M. L
description Thin films of lithium niobate were deposited on silicon (100) by a sol-gel technique and were annealed in oxygen at 400 °C. The annealed films were characterized by x-ray diffraction and transmission electron microscopy which showed crystallization to LiNbO3, a preferred orientation of the films, and an average grain size of about 0.5 μm. Electrical characterization of the films in the metal-ferroelectric-semiconductor configuration showed evidence for ferroelectricity via the hysteresis loop. The dielectric constant and dissipation factor were measured at frequencies from 10 Hz to 10 MHz with a dielectric constant of 35 and dissipation factor of 0.004 at 100 kHz. The current-voltage characteristics of the films exhibited asymmetric behavior, indicating a possible Schottky barrier and showed a leakage current density of 1.1×10−4 A/cm2 at 3 V.
doi_str_mv 10.1063/1.109721
format article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_109721</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4879187</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-285b47b98eb55ce92f4bd40e15bd6f42dd8fe35be63273148a1e749ba3c7da93</originalsourceid><addsrcrecordid>eNo9j81KAzEYRYMoWKvgI2Thws1ovvxMkqUUq0LBTfdDMvOFRuaPJEX69o5UXF0u93DhEHIP7AlYLZ5hCas5XJAVMK0rAWAuyYoxJqraKrgmNzl_LVVxIVZku5u-acFhxuTKMSHNp7EcMMdM3djROU3LUiJmOgXax3KIx4GOcfKuIF3aSEPsh3xLroLrM9795Zrst6_7zXu1-3z72LzsqlZwVipulJfaW4NeqRYtD9J3kiEo39VB8q4zAYXyWAuuBUjjALW03olWd86KNXk837ZpyjlhaOYUB5dODbDmV7-B5qy_oA9ndHa5dX1Ibmxj_uel0RaMFj-kMFoR</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Low temperature synthesis and properties of lithium niobate thin films</title><source>AIP Digital Archive</source><creator>JOSHI, V ; ROY, D ; MECARTNEY, M. L</creator><creatorcontrib>JOSHI, V ; ROY, D ; MECARTNEY, M. L</creatorcontrib><description>Thin films of lithium niobate were deposited on silicon (100) by a sol-gel technique and were annealed in oxygen at 400 °C. The annealed films were characterized by x-ray diffraction and transmission electron microscopy which showed crystallization to LiNbO3, a preferred orientation of the films, and an average grain size of about 0.5 μm. Electrical characterization of the films in the metal-ferroelectric-semiconductor configuration showed evidence for ferroelectricity via the hysteresis loop. The dielectric constant and dissipation factor were measured at frequencies from 10 Hz to 10 MHz with a dielectric constant of 35 and dissipation factor of 0.004 at 100 kHz. The current-voltage characteristics of the films exhibited asymmetric behavior, indicating a possible Schottky barrier and showed a leakage current density of 1.1×10−4 A/cm2 at 3 V.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.109721</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Dielectric thin films ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Exact sciences and technology ; Physics</subject><ispartof>Applied physics letters, 1993-09, Vol.63 (10), p.1331-1333</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-285b47b98eb55ce92f4bd40e15bd6f42dd8fe35be63273148a1e749ba3c7da93</citedby><cites>FETCH-LOGICAL-c320t-285b47b98eb55ce92f4bd40e15bd6f42dd8fe35be63273148a1e749ba3c7da93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=4879187$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JOSHI, V</creatorcontrib><creatorcontrib>ROY, D</creatorcontrib><creatorcontrib>MECARTNEY, M. L</creatorcontrib><title>Low temperature synthesis and properties of lithium niobate thin films</title><title>Applied physics letters</title><description>Thin films of lithium niobate were deposited on silicon (100) by a sol-gel technique and were annealed in oxygen at 400 °C. The annealed films were characterized by x-ray diffraction and transmission electron microscopy which showed crystallization to LiNbO3, a preferred orientation of the films, and an average grain size of about 0.5 μm. Electrical characterization of the films in the metal-ferroelectric-semiconductor configuration showed evidence for ferroelectricity via the hysteresis loop. The dielectric constant and dissipation factor were measured at frequencies from 10 Hz to 10 MHz with a dielectric constant of 35 and dissipation factor of 0.004 at 100 kHz. The current-voltage characteristics of the films exhibited asymmetric behavior, indicating a possible Schottky barrier and showed a leakage current density of 1.1×10−4 A/cm2 at 3 V.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Dielectric thin films</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9j81KAzEYRYMoWKvgI2Thws1ovvxMkqUUq0LBTfdDMvOFRuaPJEX69o5UXF0u93DhEHIP7AlYLZ5hCas5XJAVMK0rAWAuyYoxJqraKrgmNzl_LVVxIVZku5u-acFhxuTKMSHNp7EcMMdM3djROU3LUiJmOgXax3KIx4GOcfKuIF3aSEPsh3xLroLrM9795Zrst6_7zXu1-3z72LzsqlZwVipulJfaW4NeqRYtD9J3kiEo39VB8q4zAYXyWAuuBUjjALW03olWd86KNXk837ZpyjlhaOYUB5dODbDmV7-B5qy_oA9ndHa5dX1Ibmxj_uel0RaMFj-kMFoR</recordid><startdate>19930906</startdate><enddate>19930906</enddate><creator>JOSHI, V</creator><creator>ROY, D</creator><creator>MECARTNEY, M. L</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930906</creationdate><title>Low temperature synthesis and properties of lithium niobate thin films</title><author>JOSHI, V ; ROY, D ; MECARTNEY, M. L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-285b47b98eb55ce92f4bd40e15bd6f42dd8fe35be63273148a1e749ba3c7da93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Dielectric thin films</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JOSHI, V</creatorcontrib><creatorcontrib>ROY, D</creatorcontrib><creatorcontrib>MECARTNEY, M. L</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JOSHI, V</au><au>ROY, D</au><au>MECARTNEY, M. L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature synthesis and properties of lithium niobate thin films</atitle><jtitle>Applied physics letters</jtitle><date>1993-09-06</date><risdate>1993</risdate><volume>63</volume><issue>10</issue><spage>1331</spage><epage>1333</epage><pages>1331-1333</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Thin films of lithium niobate were deposited on silicon (100) by a sol-gel technique and were annealed in oxygen at 400 °C. The annealed films were characterized by x-ray diffraction and transmission electron microscopy which showed crystallization to LiNbO3, a preferred orientation of the films, and an average grain size of about 0.5 μm. Electrical characterization of the films in the metal-ferroelectric-semiconductor configuration showed evidence for ferroelectricity via the hysteresis loop. The dielectric constant and dissipation factor were measured at frequencies from 10 Hz to 10 MHz with a dielectric constant of 35 and dissipation factor of 0.004 at 100 kHz. The current-voltage characteristics of the films exhibited asymmetric behavior, indicating a possible Schottky barrier and showed a leakage current density of 1.1×10−4 A/cm2 at 3 V.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.109721</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1993-09, Vol.63 (10), p.1331-1333
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_109721
source AIP Digital Archive
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric thin films
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Physics
title Low temperature synthesis and properties of lithium niobate thin films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T16%3A19%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20temperature%20synthesis%20and%20properties%20of%20lithium%20niobate%20thin%20films&rft.jtitle=Applied%20physics%20letters&rft.au=JOSHI,%20V&rft.date=1993-09-06&rft.volume=63&rft.issue=10&rft.spage=1331&rft.epage=1333&rft.pages=1331-1333&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.109721&rft_dat=%3Cpascalfrancis_cross%3E4879187%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c320t-285b47b98eb55ce92f4bd40e15bd6f42dd8fe35be63273148a1e749ba3c7da93%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true