High-speed photoresponse in a reverse biased InGaAs/InP laser structure at 1.54 μm : experiment and modeling

We report extremely efficient (∼100% internal quantum efficiency) and high-speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is an...

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Bibliographic Details
Published in:Applied physics letters 1993-07, Vol.63 (1), p.12-14
Main Authors: CHARBONNEAU, S, AERS, G. C, MOSS, D, MCGREER, K. A, DAVIES, M, LANDHEER, D, LI, Z.-M, DELAGE, A, DION, M, TAKASAKI, B, CONN, D
Format: Article
Language:English
Subjects:
Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
Exact sciences and technology
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
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Summary:We report extremely efficient (∼100% internal quantum efficiency) and high-speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is analyzed in terms of the escape of photogenerated carriers from the InGaAsP quantum well barrier to the InP cladding contact layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109733