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High-speed photoresponse in a reverse biased InGaAs/InP laser structure at 1.54 μm : experiment and modeling

We report extremely efficient (∼100% internal quantum efficiency) and high-speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is an...

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Published in:Applied physics letters 1993-07, Vol.63 (1), p.12-14
Main Authors: CHARBONNEAU, S, AERS, G. C, MOSS, D, MCGREER, K. A, DAVIES, M, LANDHEER, D, LI, Z.-M, DELAGE, A, DION, M, TAKASAKI, B, CONN, D
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cited_by cdi_FETCH-LOGICAL-c256t-6f51f0ccf28c9c693d1beb055a9182c1b4f80cee0aa4f4bd3e1e4f95ffb8a4e63
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container_title Applied physics letters
container_volume 63
creator CHARBONNEAU, S
AERS, G. C
MOSS, D
MCGREER, K. A
DAVIES, M
LANDHEER, D
LI, Z.-M
DELAGE, A
DION, M
TAKASAKI, B
CONN, D
description We report extremely efficient (∼100% internal quantum efficiency) and high-speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is analyzed in terms of the escape of photogenerated carriers from the InGaAsP quantum well barrier to the InP cladding contact layer.
doi_str_mv 10.1063/1.109733
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ispartof Applied physics letters, 1993-07, Vol.63 (1), p.12-14
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language eng
recordid cdi_crossref_primary_10_1063_1_109733
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subjects Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
Exact sciences and technology
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
title High-speed photoresponse in a reverse biased InGaAs/InP laser structure at 1.54 μm : experiment and modeling
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