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High-speed photoresponse in a reverse biased InGaAs/InP laser structure at 1.54 μm : experiment and modeling
We report extremely efficient (∼100% internal quantum efficiency) and high-speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is an...
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Published in: | Applied physics letters 1993-07, Vol.63 (1), p.12-14 |
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Main Authors: | , , , , , , , , , , |
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cites | cdi_FETCH-LOGICAL-c256t-6f51f0ccf28c9c693d1beb055a9182c1b4f80cee0aa4f4bd3e1e4f95ffb8a4e63 |
container_end_page | 14 |
container_issue | 1 |
container_start_page | 12 |
container_title | Applied physics letters |
container_volume | 63 |
creator | CHARBONNEAU, S AERS, G. C MOSS, D MCGREER, K. A DAVIES, M LANDHEER, D LI, Z.-M DELAGE, A DION, M TAKASAKI, B CONN, D |
description | We report extremely efficient (∼100% internal quantum efficiency) and high-speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is analyzed in terms of the escape of photogenerated carriers from the InGaAsP quantum well barrier to the InP cladding contact layer. |
doi_str_mv | 10.1063/1.109733 |
format | article |
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A</au><au>DAVIES, M</au><au>LANDHEER, D</au><au>LI, Z.-M</au><au>DELAGE, A</au><au>DION, M</au><au>TAKASAKI, B</au><au>CONN, D</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-speed photoresponse in a reverse biased InGaAs/InP laser structure at 1.54 μm : experiment and modeling</atitle><jtitle>Applied physics letters</jtitle><date>1993-07-05</date><risdate>1993</risdate><volume>63</volume><issue>1</issue><spage>12</spage><epage>14</epage><pages>12-14</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report extremely efficient (∼100% internal quantum efficiency) and high-speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge-waveguide multiple quantum well p-i-n laser structure operating at 1.54 μm. 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ispartof | Applied physics letters, 1993-07, Vol.63 (1), p.12-14 |
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subjects | Bolometer infrared, submillimeter wave, microwave and radiowave receivers and detectors Exact sciences and technology Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Physics |
title | High-speed photoresponse in a reverse biased InGaAs/InP laser structure at 1.54 μm : experiment and modeling |
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