Ion channeling effect on lattice relaxation in strained In1− x Ga x As/InP multiple-quantum-well structure

• Published in: Applied physics letters 1993-08, Vol.63 (8), p.1071-1073
• Main Authors: Takahashi, Yukimi, Kuriyama, K., Matsui, Y., Kamijoh, T.
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.109836

The ion channeling phenomena for the strained and strain partially relaxed In1−xGaxAs/InP multiple-quantum-well (MQW) structures, which are grown by metalorganic vapor phase epitaxy, are presented. In addition to a well-known channeling phenomenon of strained-layer MQW structures, which cause an enhanced dechanneling along 〈110〉, it was found that dechanneling in the substrate covered with strained MQW structure is enhanced in comparison with the strain partially relaxed MQW structure. This phenomenon is observed clearly for the 〈100〉 oriented substrate rather than that along the inclined 〈110〉 axis. It is suggested that a distortion perpendicular to the 〈100〉 growth direction is induced near the interface between the buffer layer and the MQW structure by the strain stored in MQW structure. This effect is less observed in the strain partially relaxed MQW structure than in the strained MQW structure.