Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films

Electronic transport properties have been investigated in undoped hydrogenated amorphous silicon (a-Si:H) materials whose microstructure and void fraction are changed by deposition temperature (Ts). The hydrogen content in these materials decreases from 15 to 5 at. % and the void fraction by 14% as...

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Published in:Applied physics letters 1993-08, Vol.63 (7), p.955-957
Main Authors: DAWSON, R. M. A, FORTMANN, C. M, GUNES, M, LI, Y. M, NAG, S. S, COLLINS, R. W, WRONSKI, C. R
Format: Article
Language:English
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Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity of specific materials
Electronic transport in condensed matter
Exact sciences and technology
Physics
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cited_by cdi_FETCH-LOGICAL-c288t-c285bac4fcfe1eaa4491d1e267bdadf82593212acd475205809d36af6052b173
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description Electronic transport properties have been investigated in undoped hydrogenated amorphous silicon (a-Si:H) materials whose microstructure and void fraction are changed by deposition temperature (Ts). The hydrogen content in these materials decreases from 15 to 5 at. % and the void fraction by 14% as Ts is raised from 200 to 350 °C. The photo and dark conductivities are measured from 40 to 190 °C and extended state electron mobilities are derived from a self-consistent analysis. The room temperature mobilities are found to increase from 0.8 to 30 cm2/V s and become less temperature dependent as Ts increases. These temperature activated mobilities explain the Meyer–Neldel rule [Z. Tech. Phys. 18, 588 (1937)] in a-Si:H materials whose dark conductivity activation energies are greater than 0.4 eV where it cannot be explained by the statistical shift of the Fermi level.
doi_str_mv 10.1063/1.109856
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity of specific materials
Electronic transport in condensed matter
Exact sciences and technology
Physics
title Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films
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