Accurate monocrystal miscut angle determination by x-ray diffraction on a wedge

Semiconductor crystal miscut angles may be determined with high precision by a new method, based on the measurement of the Bragg angle shift for a highly asymmetric reflection. X-ray diffraction on a cleaved wedge has the particularity that the asymmetry is different for the cleavage plane and for t...

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Bibliographic Details
Published in:Applied physics letters 1993-07, Vol.63 (4), p.458-460
Main Author: GAILHANOU, M
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:Semiconductor crystal miscut angles may be determined with high precision by a new method, based on the measurement of the Bragg angle shift for a highly asymmetric reflection. X-ray diffraction on a cleaved wedge has the particularity that the asymmetry is different for the cleavage plane and for the surface whose miscut angle is to be determined. Therefore, a rocking curve gives rise to two diffraction peaks. The angular difference between the two peaks is very sensitive to the miscut angle for high asymmetry of the reflection relative to the measured surface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110023