Optical phase conjugation in InGaAs/GaAs multiple quantum wells at 1.06 μm wavelength

The observation of phase conjugation in InGaAs/GaAs multiple quantum wells at 1.06 μm wavelength is reported on. The effective nonlinearity of the sample used in our experiments was measured to be χ(3)=10−7 esu. The nonlinearity is induced by the saturation absorption due to band filling and exciton...

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Bibliographic Details
Published in:Applied physics letters 1993-07, Vol.63 (3), p.281-283
Main Authors: YANG ZHAO, CUNKAI WU, PANKAJ SHAH, KIM, M. K, DAWSON, L. R.F
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:The observation of phase conjugation in InGaAs/GaAs multiple quantum wells at 1.06 μm wavelength is reported on. The effective nonlinearity of the sample used in our experiments was measured to be χ(3)=10−7 esu. The nonlinearity is induced by the saturation absorption due to band filling and exciton bleaching. The saturation intensity is 1.3 kW/cm2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110078