Maskless writing of submicrometer gratings in fused silica by focused ion beam implantation and differential wet etching

Surface relief gratings with submicrometer periods have been fabricated in silica by ion implantation with a focused ion beam, followed by etching in diluted hydrofluoric acid. Implanted silica etches three times faster than unimplanted silica and groove depths of the order of 300 nm have been achie...

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Bibliographic Details
Published in:Applied physics letters 1993-10, Vol.63 (17), p.2309-2311
Main Authors: ALBERT, J, HILL, K. O, MALO, B, JOHNSON, D. C, BILODEAU, F, TEMPLETON, I. M, BREBNER, J. L
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Surface relief gratings with submicrometer periods have been fabricated in silica by ion implantation with a focused ion beam, followed by etching in diluted hydrofluoric acid. Implanted silica etches three times faster than unimplanted silica and groove depths of the order of 300 nm have been achieved. The method does not require photolithography or masking layers, allows arbitrary patterns to be defined, and may be used to fabricate diffractive optical elements or grating filters in optical waveguides.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110509