Magnetoresistance in magnetic manganese oxide with intrinsic antiferromagnetic spin structure

Giant and isotropic magnetoresistance as huge as −53% was observed in magnetic manganese oxide La0.72Ca0.25MnOz films with an intrinsic antiferromagnetic spin structure. We ascribe this magnetoresistance to spin-dependent electron scattering due to spin canting of the manganese oxide.

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Bibliographic Details
Published in:Applied physics letters 1993-10, Vol.63 (14), p.1990-1992
Main Authors: CHAHARA, K.-I, OHNO, T, KASAI, M, KOZONO, Y
Format: Article
Language:English
Subjects:
Antiferromagnetics
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
Magnetic properties and materials
Physics
Studies of specific magnetic materials
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Description
Summary:Giant and isotropic magnetoresistance as huge as −53% was observed in magnetic manganese oxide La0.72Ca0.25MnOz films with an intrinsic antiferromagnetic spin structure. We ascribe this magnetoresistance to spin-dependent electron scattering due to spin canting of the manganese oxide.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110624