Ge growth on Si using atomic hydrogen as a surfactant

We have examined the effect of adsorbed atomic hydrogen (H) on the evolution of Ge films on Si(001) and (111) substrates in solid-source molecular-beam epitaxy. The H flux was supplied separately from the Ge flux. By cross-sectional high-resolution transmission electron microscopy it was observed th...

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Bibliographic Details
Published in:Applied physics letters 1994-01, Vol.64 (1), p.52-54
Main Authors: Sakai, Akira, Tatsumi, Toru
Format: Article
Language:English
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Summary:We have examined the effect of adsorbed atomic hydrogen (H) on the evolution of Ge films on Si(001) and (111) substrates in solid-source molecular-beam epitaxy. The H flux was supplied separately from the Ge flux. By cross-sectional high-resolution transmission electron microscopy it was observed that H acted as a surfactant during growth, suppressing island formation of Ge on both substrates. The effect of the H surfactant on variation of the growth mode is also discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.110919