Ge growth on Si using atomic hydrogen as a surfactant

We have examined the effect of adsorbed atomic hydrogen (H) on the evolution of Ge films on Si(001) and (111) substrates in solid-source molecular-beam epitaxy. The H flux was supplied separately from the Ge flux. By cross-sectional high-resolution transmission electron microscopy it was observed th...

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Published in:Applied physics letters 1994-01, Vol.64 (1), p.52-54
Main Authors: Sakai, Akira, Tatsumi, Toru
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Language:English
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cited_by cdi_FETCH-LOGICAL-c293t-dadb64ca58e6d2240434a3d944c1affd36315d4e29dfa8c51039b336e7a4b6da3
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container_start_page 52
container_title Applied physics letters
container_volume 64
creator Sakai, Akira
Tatsumi, Toru
description We have examined the effect of adsorbed atomic hydrogen (H) on the evolution of Ge films on Si(001) and (111) substrates in solid-source molecular-beam epitaxy. The H flux was supplied separately from the Ge flux. By cross-sectional high-resolution transmission electron microscopy it was observed that H acted as a surfactant during growth, suppressing island formation of Ge on both substrates. The effect of the H surfactant on variation of the growth mode is also discussed.
doi_str_mv 10.1063/1.110919
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_110919</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_110919</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-dadb64ca58e6d2240434a3d944c1affd36315d4e29dfa8c51039b336e7a4b6da3</originalsourceid><addsrcrecordid>eNotj01LAzEUAIMouFbBn5Cjl615eUl2c5SirVDwoJ7D23xsV-yuJFuk_16lnoa5DAxjtyCWIAzewxJAWLBnrALRNDUCtOesEkJgbayGS3ZVysevaolYMb2OvM_T97zj08hfB34ow9hzmqf94PnuGPLUx5FT4cTLISfyM43zNbtI9FnizT8X7P3p8W21qbcv6-fVw7b20uJcBwqdUZ50G02QUgmFijBYpTxQSgENgg4qShsStV6DQNshmtiQ6kwgXLC7U9fnqZQck_vKw57y0YFwf7sO3GkXfwB3gkZI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Ge growth on Si using atomic hydrogen as a surfactant</title><source>AIP Digital Archive</source><creator>Sakai, Akira ; Tatsumi, Toru</creator><creatorcontrib>Sakai, Akira ; Tatsumi, Toru</creatorcontrib><description>We have examined the effect of adsorbed atomic hydrogen (H) on the evolution of Ge films on Si(001) and (111) substrates in solid-source molecular-beam epitaxy. The H flux was supplied separately from the Ge flux. By cross-sectional high-resolution transmission electron microscopy it was observed that H acted as a surfactant during growth, suppressing island formation of Ge on both substrates. The effect of the H surfactant on variation of the growth mode is also discussed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.110919</identifier><language>eng</language><ispartof>Applied physics letters, 1994-01, Vol.64 (1), p.52-54</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-dadb64ca58e6d2240434a3d944c1affd36315d4e29dfa8c51039b336e7a4b6da3</citedby><cites>FETCH-LOGICAL-c293t-dadb64ca58e6d2240434a3d944c1affd36315d4e29dfa8c51039b336e7a4b6da3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Sakai, Akira</creatorcontrib><creatorcontrib>Tatsumi, Toru</creatorcontrib><title>Ge growth on Si using atomic hydrogen as a surfactant</title><title>Applied physics letters</title><description>We have examined the effect of adsorbed atomic hydrogen (H) on the evolution of Ge films on Si(001) and (111) substrates in solid-source molecular-beam epitaxy. The H flux was supplied separately from the Ge flux. By cross-sectional high-resolution transmission electron microscopy it was observed that H acted as a surfactant during growth, suppressing island formation of Ge on both substrates. The effect of the H surfactant on variation of the growth mode is also discussed.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNotj01LAzEUAIMouFbBn5Cjl615eUl2c5SirVDwoJ7D23xsV-yuJFuk_16lnoa5DAxjtyCWIAzewxJAWLBnrALRNDUCtOesEkJgbayGS3ZVysevaolYMb2OvM_T97zj08hfB34ow9hzmqf94PnuGPLUx5FT4cTLISfyM43zNbtI9FnizT8X7P3p8W21qbcv6-fVw7b20uJcBwqdUZ50G02QUgmFijBYpTxQSgENgg4qShsStV6DQNshmtiQ6kwgXLC7U9fnqZQck_vKw57y0YFwf7sO3GkXfwB3gkZI</recordid><startdate>19940103</startdate><enddate>19940103</enddate><creator>Sakai, Akira</creator><creator>Tatsumi, Toru</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19940103</creationdate><title>Ge growth on Si using atomic hydrogen as a surfactant</title><author>Sakai, Akira ; Tatsumi, Toru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-dadb64ca58e6d2240434a3d944c1affd36315d4e29dfa8c51039b336e7a4b6da3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sakai, Akira</creatorcontrib><creatorcontrib>Tatsumi, Toru</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sakai, Akira</au><au>Tatsumi, Toru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ge growth on Si using atomic hydrogen as a surfactant</atitle><jtitle>Applied physics letters</jtitle><date>1994-01-03</date><risdate>1994</risdate><volume>64</volume><issue>1</issue><spage>52</spage><epage>54</epage><pages>52-54</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We have examined the effect of adsorbed atomic hydrogen (H) on the evolution of Ge films on Si(001) and (111) substrates in solid-source molecular-beam epitaxy. The H flux was supplied separately from the Ge flux. By cross-sectional high-resolution transmission electron microscopy it was observed that H acted as a surfactant during growth, suppressing island formation of Ge on both substrates. The effect of the H surfactant on variation of the growth mode is also discussed.</abstract><doi>10.1063/1.110919</doi><tpages>3</tpages></addata></record>
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title Ge growth on Si using atomic hydrogen as a surfactant
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T02%3A42%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ge%20growth%20on%20Si%20using%20atomic%20hydrogen%20as%20a%20surfactant&rft.jtitle=Applied%20physics%20letters&rft.au=Sakai,%20Akira&rft.date=1994-01-03&rft.volume=64&rft.issue=1&rft.spage=52&rft.epage=54&rft.pages=52-54&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.110919&rft_dat=%3Ccrossref%3E10_1063_1_110919%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c293t-dadb64ca58e6d2240434a3d944c1affd36315d4e29dfa8c51039b336e7a4b6da3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true