Delineation of semiconductor doping by scanning resistance microscopy

A new technique for the two-dimensional delineation of P-N junctions is presented using a scanning resistance microscope (SRM). The SRM uses a conducting probe to perform localized resistance measurements over a surface. These measurements are used to delineate between regions of different doping ty...

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Bibliographic Details
Published in:Applied physics letters 1994-01, Vol.64 (3), p.342-344
Main Authors: Shafai, C., Thomson, D. J., Simard-Normandin, M., Mattiussi, G., Scanlon, P. J.
Format: Article
Language:English
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Summary:A new technique for the two-dimensional delineation of P-N junctions is presented using a scanning resistance microscope (SRM). The SRM uses a conducting probe to perform localized resistance measurements over a surface. These measurements are used to delineate between regions of different doping type and concentration. By using contact forces of 10−4 N, the contact area is estimated to be 30 nm. Experiments have shown the SRM capable of junction delineation with a lateral spacial resolution of less than 35 nm. In addition, during resistance measurements the SRM performs simultaneous surface topography measurements.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111169