High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors

We have measured the optical and transport properties of In(0.2)Ga(0.8)As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8 x 1O(exp 10) cm square root...

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Bibliographic Details
Published in:Applied physics letters 1994-06, Vol.64 (25), p.3431-3433
Main Authors: Gunapala, S. D., Park, J. S., Lin, T. L., Pike, W. T., Liu, J. K., Bandara, K. M. S. V., Levine, B. F., Sarusi, G.
Format: Article
Language:English
Subjects:
Thermodynamics And Statistical Physics
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Summary:We have measured the optical and transport properties of In(0.2)Ga(0.8)As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8 x 1O(exp 10) cm square root of Hz/W (at lambda(sub p)=16.7 microns) were achieved at temperature T=40 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111232