Oxidation enhanced dopant diffusion in separation by implantation by oxygen silicon-on-insulator material

An effective interstitial surface recombination velocity for the buried Si-SiO2 interface in separation by implantation of oxygen (SIMOX) material has been used to accurately model the oxidation-enhanced diffusion of boron and phosphorous in single- and multiple-implant material. The effective recom...

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Bibliographic Details
Published in:Applied physics letters 1994-06, Vol.64 (24), p.3264-3266
Main Authors: Crowder, S. W., Griffin, P. B., Hsieh, C. J., Wei, G. Y., Plummer, J. D., Allen, L. P.
Format: Article
Language:English
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Summary:An effective interstitial surface recombination velocity for the buried Si-SiO2 interface in separation by implantation of oxygen (SIMOX) material has been used to accurately model the oxidation-enhanced diffusion of boron and phosphorous in single- and multiple-implant material. The effective recombination velocity at the SIMOX interface was found to be higher than the value for a thermally grown SiO2 interface. The enhancement of the effective recombination velocity is dependent on the material formation conditions and is empirically related to the near-interface dislocation density. Increased surface interfacial area is considered to be the most likely cause for the increased effective recombination velocity.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111304