Chemomechanical polishing of silicon: Surface termination and mechanism of removal

Infrared spectroscopy of Si(111) samples immediately after chemomechanical planarization with silica slurry (‘‘siton polishing’’) shows that the surfaces are predominantly terminated by hydrogen. This hydrogen termination is responsible for the observed strong hydrophobicity peak at a slurry pH of 1...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1994-06, Vol.64 (23), p.3115-3117
Main Authors: Pietsch, G. J., Higashi, G. S., Chabal, Y. J.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Infrared spectroscopy of Si(111) samples immediately after chemomechanical planarization with silica slurry (‘‘siton polishing’’) shows that the surfaces are predominantly terminated by hydrogen. This hydrogen termination is responsible for the observed strong hydrophobicity peak at a slurry pH of 11, at which point a monohydride termination prevails. At higher or lower pH, silanol groups replace some of the hydrogen species causing an increase in surface hydrophilicity. A removal mechanism is proposed which involves the interplay of oxidation by OH− and subsequent termination by H.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111365