Doping of zinc-selenide-telluride

We investigate the doping behavior of ZnSe/ZnTe short period superlattices. p-type doping is achieved with a dc nitrogen plasma source, n-type doping with chlorine from a ZnCl2 Knudsen source. Even a small Te content has a strong positive effect on p doping: Doping levels in the upper 1019 cm−3 rang...

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Bibliographic Details
Published in:Applied physics letters 1994-05, Vol.64 (20), p.2682-2684
Main Authors: Faschinger, W., Ferreira, S., Sitter, H.
Format: Article
Language:English
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Summary:We investigate the doping behavior of ZnSe/ZnTe short period superlattices. p-type doping is achieved with a dc nitrogen plasma source, n-type doping with chlorine from a ZnCl2 Knudsen source. Even a small Te content has a strong positive effect on p doping: Doping levels in the upper 1019 cm−3 range are achieved, and ohmic contacts can be obtained even for low carrier concentrations. The data are in excellent agreement with a theory based on the amphoteric native defect model. The opposite is valid for n doping: At Te concentrations above 20% electron concentrations are below 1016 cm−3. As a possible way to get both good n- and p-type doping at the same lattice constant we propose the use of the quaternary compound Zn(1−y)Mg(y)Se(1−x)Te(x).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111490