Very long wavelength In x Ga1− x As/GaAs quantum well infrared photodetectors

We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa1−xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cm√Hz/W at T=10 K h...

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Bibliographic Details
Published in:Applied physics letters 1994-04, Vol.64 (17), p.2288-2290
Main Authors: Gunapala, S. D., Bandara, K. M. S. V., Levine, B. F., Sarusi, G., Sivco, D. L., Cho, A. Y.
Format: Article
Language:English
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Summary:We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa1−xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cm√Hz/W at T=10 K has been achieved.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111646