GaInO3: A new transparent conducting oxide

GaInO3, a layered material with the β Ga2O3 crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium...

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Bibliographic Details
Published in:Applied physics letters 1994-04, Vol.64 (16), p.2071-2072
Main Authors: Cava, R. J., Phillips, Julia M., Kwo, J., Thomas, G. A., van Dover, R. B., Carter, S. A., Krajewski, J. J., Peck, W. F., Marshall, J. H., Rapkine, D. H.
Format: Article
Language:English
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Summary:GaInO3, a layered material with the β Ga2O3 crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO3 display good transparency over the whole optical window, superior to that of ITO in the green-blue region.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111686