Self-limiting oxidation for fabricating sub-5 nm silicon nanowires

The ability to control structural dimensions below 5 nm is essential for a systematic study of the optical and electrical properties of Si nanostructures. A combination of electron beam lithography, NF3 reactive ion etching, and dry thermal oxidation has been successfully implemented to yield 2-nm-w...

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Bibliographic Details
Published in:Applied physics letters 1994-03, Vol.64 (11), p.1383-1385
Main Authors: Liu, H. I., Biegelsen, D. K., Ponce, F. A., Johnson, N. M., Pease, R. F. W.
Format: Article
Language:English
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Summary:The ability to control structural dimensions below 5 nm is essential for a systematic study of the optical and electrical properties of Si nanostructures. A combination of electron beam lithography, NF3 reactive ion etching, and dry thermal oxidation has been successfully implemented to yield 2-nm-wide Si nanowires with aspect ratio of more than 100 to 1. With a sideview transmission electron microscopy technique, the oxidation progression of Si nanowires was characterized over a range of temperature from 800 to 1200 °C. A previously reported self-limiting oxidation phenomenon was found to occur only for oxidation temperatures below 950 °C. A preliminary model suggests that increase in the activation energy of oxidant diffusivity in a highly stressed oxide may be the main mechanism for slowing down the oxidation rate in the self-limiting regime.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111914