GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique

We report on the structural and optical properties of GaN epitaxial layers grown on 6H-SiC. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2×1017 cm−3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are...

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Bibliographic Details
Published in:Applied physics letters 1994-08, Vol.65 (8), p.1033-1035
Main Authors: Wetzel, C., Volm, D., Meyer, B. K., Pressel, K., Nilsson, S., Mokhov, E. N., Baranov, P. G.
Format: Article
Language:English
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Summary:We report on the structural and optical properties of GaN epitaxial layers grown on 6H-SiC. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2×1017 cm−3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These findings are directly reflected in the optical properties. The photoluminescence shows a single sharp exciton line with a half width of 4 meV. Impurity related donor acceptor transitions are seen with very weak intensities. However, at lower energies the internal luminescence transitions of the 3d transition metal ions Fe and V are observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112143