Molecular-beam epitaxial growth of In x Al1− x As on GaAs

The surface reconstruction of InAlAs on GaAs between 490 and 700 °C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2×1) and (1×1) surfaces occur at a substrate temperature between 490 and 65...

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Bibliographic Details
Published in:Applied physics letters 1994-08, Vol.65 (6), p.699-701
Main Authors: Chyi, Jen-Inn, Shieh, Jia-Lin, Lin, Ray-Ming, Nee, Tzer-En, Pan, Jen-Wei
Format: Article
Language:English
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Summary:The surface reconstruction of InAlAs on GaAs between 490 and 700 °C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2×1) and (1×1) surfaces occur at a substrate temperature between 490 and 650 °C, while at a temperature above 650 °C, the ordered As-stabilized (3×2 surface appeared during the steady-state growth. InAlAs/GaAs heteroepitaxial layers have been analyzed and reveal that the residual strain in the epilayers is strongly dependent on the composition as well as the thickness of the epilayer. These characteristics are consistent with the InGaAs/GaAs system.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112273