Band-edge emission from strained SiGe alloy layers on Ge(100) substrates

We have fabricated strained SixGe1−x/SiyGe1−y multiple quantum wells on Ge(100) substrates and measured the photoluminescence (PL) spectra, observing band-edge emission from the SiGe alloy layers. The emission is due to the recombination of both bound excitons and free excitons in the quantum wells....

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Published in:Applied physics letters 1994-08, Vol.65 (5), p.601-603
Main Authors: Terashima, Koichi, Ikarashi, Taeko, Tweet, Douglas, Miyanaga, Keiko, Tatsumi, Toru, Tajima, Michio
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Language:English
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container_issue 5
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creator Terashima, Koichi
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description We have fabricated strained SixGe1−x/SiyGe1−y multiple quantum wells on Ge(100) substrates and measured the photoluminescence (PL) spectra, observing band-edge emission from the SiGe alloy layers. The emission is due to the recombination of both bound excitons and free excitons in the quantum wells. From the positions of the observed PL lines, we have evaluated the band-gap energies of the strained SiGe alloy layers, and found them to be smaller than those of bulk SiGe alloys. The band-gap energy increases with the Si content of the alloy, reaching a maximum at about 15% Si, and subsequently decreases. These results agree well with the theoretical calculations for strained layers, and suggest a type II band alignment in some cases for SixGe1−x/SiyGe1−y heterostructures on Ge(100).
doi_str_mv 10.1063/1.112311
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title Band-edge emission from strained SiGe alloy layers on Ge(100) substrates
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