ZnMgSeTe light emitting diodes

The MBE growth of light emitting diodes based on junctions between n-ZnMgSe and p-ZnMgSeTe is reported. For optimized compositions of the n- and p-layer, doping levels as high as n=p=2×1018 cm−3 were obtained. The p contacts of these diodes are ohmic, and the voltage needed to achieve a given curren...

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Bibliographic Details
Published in:Applied physics letters 1994-12, Vol.65 (25), p.3215-3217
Main Authors: Faschinger, W., Krump, R., Brunthaler, G., Ferreira, S., Sitter, H.
Format: Article
Language:English
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Summary:The MBE growth of light emitting diodes based on junctions between n-ZnMgSe and p-ZnMgSeTe is reported. For optimized compositions of the n- and p-layer, doping levels as high as n=p=2×1018 cm−3 were obtained. The p contacts of these diodes are ohmic, and the voltage needed to achieve a given current density is comparable to that of the best ZnSe based p-n junctions reported in the literature. The diodes show green electroluminescence up to room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112416