Mechanisms of implant damage annealing and transient enhanced diffusion in Si

Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {...

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Bibliographic Details
Published in:Applied physics letters 1994-12, Vol.65 (23), p.2981-2983
Main Authors: Cowern, N. E. B., van de Walle, G. F. A., Zalm, P. C., Vandenhoudt, D. W. E.
Format: Article
Language:English
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Summary:Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {113} defects. We show that the transient enhanced diffusion seen in most previous studies arises from the subsequent dissolution of the {113} defects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112483