Mechanisms of implant damage annealing and transient enhanced diffusion in Si

Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1994-12, Vol.65 (23), p.2981-2983
Main Authors: Cowern, N. E. B., van de Walle, G. F. A., Zalm, P. C., Vandenhoudt, D. W. E.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c291t-3efe1b3621f94df291f5205e90f6b1c1923906465d604bf21b062e6bf45ddf483
cites cdi_FETCH-LOGICAL-c291t-3efe1b3621f94df291f5205e90f6b1c1923906465d604bf21b062e6bf45ddf483
container_end_page 2983
container_issue 23
container_start_page 2981
container_title Applied physics letters
container_volume 65
creator Cowern, N. E. B.
van de Walle, G. F. A.
Zalm, P. C.
Vandenhoudt, D. W. E.
description Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {113} defects. We show that the transient enhanced diffusion seen in most previous studies arises from the subsequent dissolution of the {113} defects.
doi_str_mv 10.1063/1.112483
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_112483</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_112483</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-3efe1b3621f94df291f5205e90f6b1c1923906465d604bf21b062e6bf45ddf483</originalsourceid><addsrcrecordid>eNotUD1PwzAQtRBIhILET_DIknJnx249ogooUisGYI6c-K4YJU4Vh4F_T1CZ3pfeSfeEuEVYIlh9j0tEVa31mSgQVqtSI67PRQEAurTO4KW4yvlrlkZpXYj9ntpPn2LusxxYxv7Y-TTJ4Ht_IOlTIt_FdJhZkNPoU440x5TmTktBhsj8neOQZEzyLV6LC_Zdppt_XIiPp8f3zbbcvT6_bB52ZascTqUmJmy0VciuCjx7bBQYcsC2wRad0g5sZU2wUDWssAGryDZcmRB4fm4h7k5323HIeSSuj2Ps_fhTI9R_M9RYn2bQv-TfTr8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Mechanisms of implant damage annealing and transient enhanced diffusion in Si</title><source>AIP Digital Archive</source><creator>Cowern, N. E. B. ; van de Walle, G. F. A. ; Zalm, P. C. ; Vandenhoudt, D. W. E.</creator><creatorcontrib>Cowern, N. E. B. ; van de Walle, G. F. A. ; Zalm, P. C. ; Vandenhoudt, D. W. E.</creatorcontrib><description>Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {113} defects. We show that the transient enhanced diffusion seen in most previous studies arises from the subsequent dissolution of the {113} defects.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.112483</identifier><language>eng</language><ispartof>Applied physics letters, 1994-12, Vol.65 (23), p.2981-2983</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-3efe1b3621f94df291f5205e90f6b1c1923906465d604bf21b062e6bf45ddf483</citedby><cites>FETCH-LOGICAL-c291t-3efe1b3621f94df291f5205e90f6b1c1923906465d604bf21b062e6bf45ddf483</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Cowern, N. E. B.</creatorcontrib><creatorcontrib>van de Walle, G. F. A.</creatorcontrib><creatorcontrib>Zalm, P. C.</creatorcontrib><creatorcontrib>Vandenhoudt, D. W. E.</creatorcontrib><title>Mechanisms of implant damage annealing and transient enhanced diffusion in Si</title><title>Applied physics letters</title><description>Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {113} defects. We show that the transient enhanced diffusion seen in most previous studies arises from the subsequent dissolution of the {113} defects.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNotUD1PwzAQtRBIhILET_DIknJnx249ogooUisGYI6c-K4YJU4Vh4F_T1CZ3pfeSfeEuEVYIlh9j0tEVa31mSgQVqtSI67PRQEAurTO4KW4yvlrlkZpXYj9ntpPn2LusxxYxv7Y-TTJ4Ht_IOlTIt_FdJhZkNPoU440x5TmTktBhsj8neOQZEzyLV6LC_Zdppt_XIiPp8f3zbbcvT6_bB52ZascTqUmJmy0VciuCjx7bBQYcsC2wRad0g5sZU2wUDWssAGryDZcmRB4fm4h7k5323HIeSSuj2Ps_fhTI9R_M9RYn2bQv-TfTr8</recordid><startdate>19941205</startdate><enddate>19941205</enddate><creator>Cowern, N. E. B.</creator><creator>van de Walle, G. F. A.</creator><creator>Zalm, P. C.</creator><creator>Vandenhoudt, D. W. E.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19941205</creationdate><title>Mechanisms of implant damage annealing and transient enhanced diffusion in Si</title><author>Cowern, N. E. B. ; van de Walle, G. F. A. ; Zalm, P. C. ; Vandenhoudt, D. W. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-3efe1b3621f94df291f5205e90f6b1c1923906465d604bf21b062e6bf45ddf483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cowern, N. E. B.</creatorcontrib><creatorcontrib>van de Walle, G. F. A.</creatorcontrib><creatorcontrib>Zalm, P. C.</creatorcontrib><creatorcontrib>Vandenhoudt, D. W. E.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cowern, N. E. B.</au><au>van de Walle, G. F. A.</au><au>Zalm, P. C.</au><au>Vandenhoudt, D. W. E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanisms of implant damage annealing and transient enhanced diffusion in Si</atitle><jtitle>Applied physics letters</jtitle><date>1994-12-05</date><risdate>1994</risdate><volume>65</volume><issue>23</issue><spage>2981</spage><epage>2983</epage><pages>2981-2983</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {113} defects. We show that the transient enhanced diffusion seen in most previous studies arises from the subsequent dissolution of the {113} defects.</abstract><doi>10.1063/1.112483</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1994-12, Vol.65 (23), p.2981-2983
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_112483
source AIP Digital Archive
title Mechanisms of implant damage annealing and transient enhanced diffusion in Si
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T01%3A18%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mechanisms%20of%20implant%20damage%20annealing%20and%20transient%20enhanced%20diffusion%20in%20Si&rft.jtitle=Applied%20physics%20letters&rft.au=Cowern,%20N.%20E.%20B.&rft.date=1994-12-05&rft.volume=65&rft.issue=23&rft.spage=2981&rft.epage=2983&rft.pages=2981-2983&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.112483&rft_dat=%3Ccrossref%3E10_1063_1_112483%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c291t-3efe1b3621f94df291f5205e90f6b1c1923906465d604bf21b062e6bf45ddf483%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true