Optimization of growth conditions for strain compensated Ga0.32In0.68As/Ga0.61In0.39As multiple quantum wells

The results of an investigation into the growth of Ga0.32In0.68As/Ga0.61In0.39As strain compensated multiple quantum well stacks are presented. We show that these structures, which contain alloys that are not prone to compositional clustering, do suffer from thickness modulated growth. A growth stra...

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Bibliographic Details
Published in:Applied physics letters 1994-10, Vol.65 (18), p.2311-2313
Main Authors: Smith, A. D., Briggs, A. T. R., Scarrott, K., Zhou, Xiao, Bangert, U.
Format: Article
Language:English
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Summary:The results of an investigation into the growth of Ga0.32In0.68As/Ga0.61In0.39As strain compensated multiple quantum well stacks are presented. We show that these structures, which contain alloys that are not prone to compositional clustering, do suffer from thickness modulated growth. A growth strategy has been developed to inhibit this phenomenon and a 50 well, strain compensated stack has been grown with planar and abrupt interfaces.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112727