Dependence on the In concentration of the piezoelectric field in (111)B InGaAs/GaAs strained heterostructures

A series of (111)B InxGa1−xAs/GaAs multiple quantum well p-i-n structures have been investigated via low temperature photocurrent and photoluminescence spectroscopies. The indium mole fraction was in the range of 0.07–0.23. Evolution of the experimental blueshifts of the transition energies, with th...

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Bibliographic Details
Published in:Applied physics letters 1994-10, Vol.65 (16), p.2042-2044
Main Authors: Sánchez-Rojas, J. L., Sacedón, A., González-Sanz, F., Calleja, E., Muñoz, E.
Format: Article
Language:English
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Summary:A series of (111)B InxGa1−xAs/GaAs multiple quantum well p-i-n structures have been investigated via low temperature photocurrent and photoluminescence spectroscopies. The indium mole fraction was in the range of 0.07–0.23. Evolution of the experimental blueshifts of the transition energies, with the external bias, agreed very well with the theoretical calculations. This allowed us to obtain precise information about the piezoelectric constant, e14, for the various In compositions. For the range of x investigated, we have found e14(x) to be linear with x but significantly lower than predicted by a simple linear interpolation of the accepted values for GaAs and InAs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112787