Critical currents of YBa2Cu3O y thick films prepared by liquid phase epitaxial growth

• Published in: Applied physics letters 1994-09, Vol.65 (13), p.1714-1716
• Main Authors: Yoshida, Manabu, Nakamoto, Takao, Kitamura, Tasuku, Hyun, Ok-Bae, Hirabayashi, Izumi, Tanaka, Shoji, Tsuzuki, Akihiro, Sugawara, Yoshihiro, Ikuhara, Yuichi
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.112895

We have succeeded in preparing c-axis oriented high-Jc YBa2Cu3Oy films on MgO(100) substrate by the liquid phase epitaxy (LPE) technique. The growth rate was typically about 2 μm/min, which was 10–102 times larger than that by ordinary vapor growth techniques. The film thickness ranged 10–50 μm by choosing the dipping time. The Tc of the best film exceeded 88 K after oxygen annealing, and the transport Jc was 1.1×105 A/cm2 at 77 K and 0 T. In-field Jc’s at 77 K and 1.5 T were 2.8×104 A/cm2 and 2.0×104 A/cm2 for the B⊥ab plane and B∥ab plane, respectively. In addition, the peak effect of Jc was observed at several tesla for B∥ab plane geometry. Based on the microstructure observed by high resolution transmission electron microscopy, the relevant peak effect is considered to be caused by stacking faults which act as a field induced pinning center.