Ultrafast band-edge carrier dynamics in In0.65Ga0.35As

The ultrafast band-edge carrier dynamics in In0.65Ga0.35As/GaAs are studied using a transmission correlation technique in the 77–300 K temperature range. The experiment is performed using a femtosecond optical parametric oscillator tunable in the 1.5–1.8 μm spectral range with sub-100-fs pulses. Rap...

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Bibliographic Details
Published in:Applied physics letters 1994-10, Vol.65 (18), p.2323-2325
Main Authors: Pelouch, Wayne S., Schlie, L. A.
Format: Article
Language:English
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Summary:The ultrafast band-edge carrier dynamics in In0.65Ga0.35As/GaAs are studied using a transmission correlation technique in the 77–300 K temperature range. The experiment is performed using a femtosecond optical parametric oscillator tunable in the 1.5–1.8 μm spectral range with sub-100-fs pulses. Rapid recovery (≤10 ps) of the nonlinear absorption is observed, suggesting an exceptionally high rate of recombination predominantly due to dislocations at the InGaAs/GaAs heterojunction. The phonon-scattering time is experimentally identified and measured to be 200–400 fs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112963