Characterization of interface topography of the buried Si-SiO2 interface in silicon-on-insulator material by atomic force microscopy

Atomic force microscopy (AFM) has been used to characterize the topography of the buried Si-SiO2 interface in Bonded, single-implant Separation by IMplantation of OXygen (SIMOX), and multiple-implant SIMOX silicon-on-insulator material. The properties of this interface have important implications fo...

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Bibliographic Details
Published in:Applied physics letters 1994-09, Vol.65 (13), p.1698-1699
Main Authors: Crowder, S. W., Griffin, P. B., Plummer, J. D.
Format: Article
Language:English
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Summary:Atomic force microscopy (AFM) has been used to characterize the topography of the buried Si-SiO2 interface in Bonded, single-implant Separation by IMplantation of OXygen (SIMOX), and multiple-implant SIMOX silicon-on-insulator material. The properties of this interface have important implications for processing and for device performance. The root-mean-square surface roughness was found to be 11.4 nm for single-implant material, 2.9 nm for multiple-implant material, and less than 1.5 nm for bonded material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112968