Analysis of T 0 in 1.3 μm multi-quantum-well and bulk active lasers

Temperature dependence of threshold in 1.3 μm semiconductor lasers is analyzed in terms of contributions due to gain, internal efficiency, internal loss, and nonradiative recombination. Rapid decrease of differential gain and roughly proportional increase in transparency carrier density are determin...

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Bibliographic Details
Published in:Applied physics letters 1995-05, Vol.66 (20), p.2613-2615
Main Authors: Ackerman, D. A., Morton, P. A., Shtengel, G. E., Hybertsen, M. S., Kazarinov, R. F., Tanbun-Ek, T., Logan, R. A.
Format: Article
Language:English
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Summary:Temperature dependence of threshold in 1.3 μm semiconductor lasers is analyzed in terms of contributions due to gain, internal efficiency, internal loss, and nonradiative recombination. Rapid decrease of differential gain and roughly proportional increase in transparency carrier density are determined to dominate temperature dependence of threshold current. Auger recombination is found to play a secondary role in reducing T0 by compounding the effects of rapidly increasing threshold carrier density.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113101