Real-time thickness control of resonant-tunneling diode growth based on reflection mass spectrometry

We used reflection mass spectrometry (REMS) to control the molecular beam epitaxial growth of resonant-tunneling diode (RTD) structures. The REMS-based thickness value controlled the effusion cell shutter actuation, and compensated in real time for flux transients and short-term flux drift. Use of R...

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Bibliographic Details
Published in:Applied physics letters 1995-05, Vol.66 (19), p.2555-2557
Main Authors: Celii, F. G., Harton, T. B., Kao, Y.-C., Moise, T. S.
Format: Article
Language:English
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Summary:We used reflection mass spectrometry (REMS) to control the molecular beam epitaxial growth of resonant-tunneling diode (RTD) structures. The REMS-based thickness value controlled the effusion cell shutter actuation, and compensated in real time for flux transients and short-term flux drift. Use of REMS control during deposition of AlAs, InAs, and InGaAs layers resulted in improved symmetry and reproducibility of the RTD I-V characteristics, compared with time-based, dead-reckoning growth. REMS-based control for flux compensation during growth of GaAs/AlGaAs multi-quantum-well structures is also reported.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113165