Schottky-based band lineups for refractory semiconductors

An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconduc...

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Bibliographic Details
Published in:Applied physics letters 1995-04, Vol.66 (15), p.1974-1976
Main Authors: Wang, M. W., McCaldin, J. O., Swenberg, J. F., McGill, T. C., Hauenstein, R. J.
Format: Article
Language:English
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Summary:An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconductors with lattice constant values in the range from C through ZnSe are presented. Based on the estimated band alignments and the recently demonstrated p-type dopability of GaN, we propose three novel heterojunction schemes which seek to address inherent difficulties in doping or electrical contact to wide-gap semiconductors such as ZnO, ZnSe, and ZnS.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113295