Room-temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layers

We report the observation of visible-light emission at room temperature from high fluence (0.3–3×1017 cm−2) Si+ implanted thermal SiO2 layers grown on silicon substrates. Significant blue-light emission and an intense broad luminescent band with a peak beyond 750 nm are observed after annealing at h...

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Bibliographic Details
Published in:Applied physics letters 1995-02, Vol.66 (7), p.851-853
Main Authors: Mutti, P., Ghislotti, G., Bertoni, S., Bonoldi, L., Cerofolini, G. F., Meda, L., Grilli, E., Guzzi, M.
Format: Article
Language:English
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Summary:We report the observation of visible-light emission at room temperature from high fluence (0.3–3×1017 cm−2) Si+ implanted thermal SiO2 layers grown on silicon substrates. Significant blue-light emission and an intense broad luminescent band with a peak beyond 750 nm are observed after annealing at high temperature (T≥1000 °C). The red-light emission, present only in the highest fluence implant, is attributed to the luminescence emitted from silicon nanocrystals produced by silicon precipitation. The presence of silicon nanocrystals is confirmed by transmission electron microscopy. Significant blue-light emission is visible after thermal annealing in the 1×1017 cm−2 fluence implant. The peak position shifts from 490 to 540 nm by increasing the annealing cycles temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113408