Metalorganic chemical vapor deposition of TiO2:N anatase thin film on Si substrate

Titanium dioxide thin film doped with nitrogen was deposited at 420 °C on p-type silicon substrate by metalorganic chemical vapor deposition using titanium tetra-isopropoxide and nitrous oxide. From an x-ray diffraction result, when deposited at 420 °C, only the anatase (101) peak and (200) peak wer...

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Bibliographic Details
Published in:Applied physics letters 1995-02, Vol.66 (7), p.815-816
Main Authors: Lee, Dong Heon, Cho, Yong Soo, Yi, Woul In, Kim, Tae Song, Lee, Jeon Kook, Jin Jung, Hyung
Format: Article
Language:English
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Summary:Titanium dioxide thin film doped with nitrogen was deposited at 420 °C on p-type silicon substrate by metalorganic chemical vapor deposition using titanium tetra-isopropoxide and nitrous oxide. From an x-ray diffraction result, when deposited at 420 °C, only the anatase (101) peak and (200) peak were observed. Raman spectroscopy confirmed the presence of anatase phase without any rutile or TiN phase. X-ray photoelectron spectrum revealed that nitrogen was doped into the lattice of TiO2 anatase. In the bulk of the film nitrogen peak was observed, and the spectrum of Ti 2p core level confirmed titanium–nitrogen bonding due to nitrogen incorporation into the anatase lattice.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113430