Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

• Published in: Applied physics letters 1995-02, Vol.66 (9), p.1083-1085
• Main Authors: Khan, M. Asif, Shur, Michael S., Kuznia, John N., Chen, Q., Burm, Jin, Schaff, William
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.113579

We report on the dc characteristics and microwave performance of AlGaN/GaN heterostructure field effect transistors in the temperature range from 25 to 300 °C. At temperatures above 200 °C, we observe the temperature activated shunt conductance which is independent of the gate voltage (the activation energy is 0.505 eV). The cutoff frequency and the maximum frequency of oscillations vary from 22 and 70 GHz at 25 °C to 5 and 4 GHz at 300 °C, respectively. The gate leakage current in the range of gate biases from −4 to +1 V is small and nearly proportional to the gate voltage even at 300 °C. At temperatures above 200 °C, the gate leakage current is temperature activated (the activation energy is 0.88 eV). These results show that deep traps strongly affect the AlGaN/GaN characteristics at elevated temperatures.