Temperature-dependent threshold and modulation characteristics in InGaAs/GaAs quantum-well ridge-waveguide lasers

The observed temperature dependence of threshold currents in InGaAs/GaAs quantum-well ridge-waveguide lasers is modeled. This method incorporates both experimental data and theoretical gain calculations. The results show that lateral leakage currents must be included in the ridge-waveguide laser mod...

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Bibliographic Details
Published in:Applied physics letters 1995-04, Vol.66 (16), p.2040-2042
Main Authors: Hu, S. Y., Corzine, S. W., Chuang, Z. M., Law, K.-K., Young, D. B., Gossard, A. C., Coldren, L. A., Merz, J. L.
Format: Article
Language:English
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Summary:The observed temperature dependence of threshold currents in InGaAs/GaAs quantum-well ridge-waveguide lasers is modeled. This method incorporates both experimental data and theoretical gain calculations. The results show that lateral leakage currents must be included in the ridge-waveguide laser models. Based on the same model, the temperature-dependent modulation characteristics for InGaAs/GaAs quantum-well ridge-waveguide lasers are also investigated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113685