Temperature-dependent threshold and modulation characteristics in InGaAs/GaAs quantum-well ridge-waveguide lasers

The observed temperature dependence of threshold currents in InGaAs/GaAs quantum-well ridge-waveguide lasers is modeled. This method incorporates both experimental data and theoretical gain calculations. The results show that lateral leakage currents must be included in the ridge-waveguide laser mod...

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Published in:Applied physics letters 1995-04, Vol.66 (16), p.2040-2042
Main Authors: Hu, S. Y., Corzine, S. W., Chuang, Z. M., Law, K.-K., Young, D. B., Gossard, A. C., Coldren, L. A., Merz, J. L.
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Language:English
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container_end_page 2042
container_issue 16
container_start_page 2040
container_title Applied physics letters
container_volume 66
creator Hu, S. Y.
Corzine, S. W.
Chuang, Z. M.
Law, K.-K.
Young, D. B.
Gossard, A. C.
Coldren, L. A.
Merz, J. L.
description The observed temperature dependence of threshold currents in InGaAs/GaAs quantum-well ridge-waveguide lasers is modeled. This method incorporates both experimental data and theoretical gain calculations. The results show that lateral leakage currents must be included in the ridge-waveguide laser models. Based on the same model, the temperature-dependent modulation characteristics for InGaAs/GaAs quantum-well ridge-waveguide lasers are also investigated.
doi_str_mv 10.1063/1.113685
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title Temperature-dependent threshold and modulation characteristics in InGaAs/GaAs quantum-well ridge-waveguide lasers
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