Effect of fluorine co-implantation on MeV erbium implanted silicon

Fluorine was co-implanted with 2 MeV erbium into silicon substrates. The thermal treatment for implanted samples was started with a 600 °C, 3 h anneal for solid-phase epitaxial regrowth then followed by a 900 °C, 30 min anneal to optically activate the erbium atoms. Photoluminescence measurements ha...

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Bibliographic Details
Published in:Applied physics letters 1995-06, Vol.66 (23), p.3158-3160
Main Authors: Liu, P., Zhang, J. P., Wilson, R. J., Curello, G., Rao, S. S., Hemment, P. L. F.
Format: Article
Language:English
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Summary:Fluorine was co-implanted with 2 MeV erbium into silicon substrates. The thermal treatment for implanted samples was started with a 600 °C, 3 h anneal for solid-phase epitaxial regrowth then followed by a 900 °C, 30 min anneal to optically activate the erbium atoms. Photoluminescence measurements have shown a strong enhancement of the luminescence intensity in samples co-implanted with fluorine which, it is suggested, leads to the formation of Er–F complexes and facilitates defect annealing in the silicon lattice. Rutherford backscattering spectrometry was used to characterize the crystalline quality and erbium redistribution after the regrowth.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113708