Ge/Pd (Zn) Ohmic contact scheme on p -InP based on the solid phase regrowth principle

A contact metallization scheme of Ge/Pd(Zn), based on the solid-phase regrowth principle, has been developed for the formation of Ohmic contact on p-InP. Typical contact resistivities of low 10−4 to low 10−5 Ω cm2 can be obtained after annealing at temperatures higher than 400 °C. Cross-sectional tr...

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Bibliographic Details
Published in:Applied physics letters 1995-06, Vol.66 (24), p.3310-3312
Main Authors: Wang, L. C., Park, Moon-Ho, Deng, Fei, Clawson, A., Lau, S. S., Hwang, D. M., Palmstro/m, C. J.
Format: Article
Language:English
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Summary:A contact metallization scheme of Ge/Pd(Zn), based on the solid-phase regrowth principle, has been developed for the formation of Ohmic contact on p-InP. Typical contact resistivities of low 10−4 to low 10−5 Ω cm2 can be obtained after annealing at temperatures higher than 400 °C. Cross-sectional transmission electron microscopy study confirmed the solid-phase regrowth process in the InP substrate. Precipitates of trapped materials during solid phase regrowth have also been observed. A solid phase regrowth model is proposed to rationalize the electrical and metallurgical properties. This solid phase regrowth process is expected to form low resistance Ohmic contact on other In-based compound semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113740