Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy

Time-resolved photoluminescence spectroscopy has been used to probe the dynamics of optical transitions in GaN epitaxial layers grown by molecular beam epitaxy. In particular, systematic measurements on a band-edge transition at about 3.42 eV have been carried out. Recombination lifetimes of this tr...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1995-06, Vol.66 (25), p.3474-3476
Main Authors: Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Sverdlov, B. N., Botchkarev, A., Morkoç, H.
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Time-resolved photoluminescence spectroscopy has been used to probe the dynamics of optical transitions in GaN epitaxial layers grown by molecular beam epitaxy. In particular, systematic measurements on a band-edge transition at about 3.42 eV have been carried out. Recombination lifetimes of this transition have been measured at different emission energies. Our results clearly show that the time-resolved photoluminescence can provide immense value in the understanding of the dynamic processes of optical transitions in GaN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113768