Second-harmonic generation from GaAs/AlAs vertical cavity

We have demonstrated second-harmonic generation in a GaAs/AlAs vertical cavity grown on a (311)B GaAs substrate. Second-harmonic light of 492 nm was observed and its efficiency was measured to be 1.4×10−4 %/W. The cavity confines high intensity of fundamental field, resulting in efficient second-har...

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Bibliographic Details
Published in:Applied physics letters 1995-04, Vol.66 (17), p.2159-2161
Main Authors: Nakagawa, S., Yamada, N., Mikoshiba, N., Mars, D. E.
Format: Article
Language:English
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Summary:We have demonstrated second-harmonic generation in a GaAs/AlAs vertical cavity grown on a (311)B GaAs substrate. Second-harmonic light of 492 nm was observed and its efficiency was measured to be 1.4×10−4 %/W. The cavity confines high intensity of fundamental field, resulting in efficient second-harmonic generation. Quasiphase matching was realized with the stacked GaAs/AlAs layers inside the cavity, which was designed taking into account the strong absorption of second-harmonic power in GaAs layers. We show that conversion efficiency of the GaAs/AlAs vertical cavity could be more than 10%/W if the optimization is completed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.113932