Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates

The cathodoluminescence (CL) of erbium and oxygen coimplanted GaN (GaN:Er:O) and sapphire (sapphire:Er:O) was studied as a function of temperature. Following annealing, the 1.54 μm intra-4f-shell emission line was observed in the temperature range of 6–380 K. As the temperature increased from 6 K to...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1995-01, Vol.66 (5), p.562-564
Main Authors: Qiu, C. H., Leksono, M. W., Pankove, J. I., Torvik, J. T., Feuerstein, R. J., Namavar, F.
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The cathodoluminescence (CL) of erbium and oxygen coimplanted GaN (GaN:Er:O) and sapphire (sapphire:Er:O) was studied as a function of temperature. Following annealing, the 1.54 μm intra-4f-shell emission line was observed in the temperature range of 6–380 K. As the temperature increased from 6 K to room temperature, the integrated intensity of the infrared peak decreased by less than 5% for GaN:Er:O, while it decreased by 18% for sapphire:Er:O. The observation of minimal thermal quenching by CL suggests that Er and O doped GaN is a promising material for electrically pumped room-temperature optical devices emitting at 1.54 μm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114013