Cross-sectional scanning tunneling microscopy study of GaAs/AlAs short period superlattices: The influence of growth interrupt on the interfacial structure

We report studies of GaAs/AlAs short period superlattices using cross-sectional scanning tunneling microscopy. In particular, we investigate the role of growth interrupt time on the resulting interfacial structure. Superlattices with repeated periods of four layers of GaAs and two layers of AlAs are...

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Bibliographic Details
Published in:Applied physics letters 1995-01, Vol.66 (4), p.478-480
Main Authors: Smith, A. R., Chao, Kuo-Jen, Shih, C. K., Shih, Y. C., Streetman, B. G.
Format: Article
Language:English
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Summary:We report studies of GaAs/AlAs short period superlattices using cross-sectional scanning tunneling microscopy. In particular, we investigate the role of growth interrupt time on the resulting interfacial structure. Superlattices with repeated periods of four layers of GaAs and two layers of AlAs are resolved atom by atom. Superlattices grown using a 30 s growth interrupt time are observed while those grown with a 5 s growth interrupt time are not. We also discuss residual effects of the growth interrupt process on layers grown on top of the short-period superlattice.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114062