Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures

We demonstrate single electron charging in fully controllable nanoscale quantum devices at temperatures above 4 K. Hitherto, single electron devices operating at ‘‘high’’ temperatures have been two-terminal, having no control electrode, whereas fully tunable structures such as quantum dots have only...

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Bibliographic Details
Published in:Applied physics letters 1995-06, Vol.66 (26), p.3666-3668
Main Authors: Borsosfoldi, Z., Rahman, M., Larkin, I. A., Long, A. R., Davies, J. H., Weaver, J. M. R., Holland, M. C., Williamson, J. G.
Format: Article
Language:English
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Summary:We demonstrate single electron charging in fully controllable nanoscale quantum devices at temperatures above 4 K. Hitherto, single electron devices operating at ‘‘high’’ temperatures have been two-terminal, having no control electrode, whereas fully tunable structures such as quantum dots have only shown charging effects at temperatures of 4 K or less. We have fabricated ultrasmall quantum dots on modulation doped heterostructures where the two-dimensional electron gas is less than 30 nm from the surface. Dots with lithographic diameter 150 nm show Coulomb oscillations up to temperatures of 7 K. Higher temperature operation allows potential applications to be considered without the need, for example, of a dilution fridge.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114134