Real time spectroscopic ellipsometry study of hydrogenated amorphous silicon p-i-n solar cells: Characterization of microstructural evolution and optical gaps

Spectroscopic ellipsometry measurements have been performed during the preparation of hydrogenated amorphous silicon p-i-n solar cells in the SnO2:F/p-i-n/Cr configuration. Postdeposition data analysis yields the evolution of bulk, surface roughness, and interface layer thicknesses with ∼0.2 Å sensi...

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Bibliographic Details
Published in:Applied physics letters 1995-10, Vol.67 (18), p.2669-2671
Main Authors: Koh, Joohyun, Lu, Yiwei, Kim, Sangbo, Burnham, J. S., Wronski, C. R., Collins, R. W.
Format: Article
Language:English
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Summary:Spectroscopic ellipsometry measurements have been performed during the preparation of hydrogenated amorphous silicon p-i-n solar cells in the SnO2:F/p-i-n/Cr configuration. Postdeposition data analysis yields the evolution of bulk, surface roughness, and interface layer thicknesses with ∼0.2 Å sensitivity. In addition, the dielectric functions and optical gaps of the p-, i-, and n-layers are determined in the analysis. With the real time measurement approach, the layer properties are determined in the actual device configuration, rather than being inferred indirectly from studies of thick film counterparts.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114287