Dry etch damage in InN, InGaN, and InAlN

Changes in conductivity of InN, In0.5Ga0.5N, and In0.5Al0.5N layers exposed to Ar plasmas under both electron cyclotron resonance and reactive ion etching conditions have been measured as a function of rf power, pressure, and exposure time. The combination of high microwave and high rf powers produc...

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Bibliographic Details
Published in:Applied physics letters 1995-10, Vol.67 (16), p.2329-2331
Main Authors: Pearton, S. J., Lee, J. W., MacKenzie, J. D., Abernathy, C. R., Shul, R. J.
Format: Article
Language:English
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Summary:Changes in conductivity of InN, In0.5Ga0.5N, and In0.5Al0.5N layers exposed to Ar plasmas under both electron cyclotron resonance and reactive ion etching conditions have been measured as a function of rf power, pressure, and exposure time. The combination of high microwave and high rf powers produces large increases (10–104 times) in sheet resistance of the nitrides, but conditions more typical of real etching processes (rf power
ISSN:0003-6951
1077-3118
DOI:10.1063/1.114334