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X‐ray reflection properties of annealed silicon single crystals
We present a series of x‐ray reflectivity measurements performed on annealed Czochralski grown silicon (ACS) crystals in the energy range E
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Published in: | Review of Scientific Instruments 1992-01, Vol.63 (1), p.907-910 |
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container_issue | 1 |
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container_title | Review of Scientific Instruments |
container_volume | 63 |
creator | Zaumseil, P. Winter, U. Joksch, St Freund, A. K. |
description | We present a series of x‐ray reflectivity measurements performed on annealed Czochralski grown silicon (ACS) crystals in the energy range E |
doi_str_mv | 10.1063/1.1143775 |
format | article |
fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1143775</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>rsi</sourcerecordid><originalsourceid>FETCH-LOGICAL-c326t-cc2aa677a8a58b8d856cffc287e5e87064e7d598e42e38ad0ac3c24552febcba3</originalsourceid><addsrcrecordid>eNp9j8tKA0EQRRtRMEYX_sEs3ChM7Hd3liH4AsGNgruhUlMtLePM0D0I2fkJfqNf4oQEXWlt7qJOXeowdir4THCrLsVMCK2cM3tsIrifl85Ktc8mnCtdWqf9ITvK-ZWPY4SYsMXz18dngnWRKDSEQ-zaok9dT2mIlIsuFNC2BA3VRY5NxHGdY_vSUIFpnQdo8jE7CGPQyS6n7On66nF5W94_3NwtF_clKmmHElECWOfAg_ErX3tjMQSU3pEh77jV5Goz96QlKQ81B1QotTEy0ApXoKbsfNuLqct5fLfqU3yDtK4Erzbulah27iN7tmV7yAhNSNBizD8HRjptNR-xiy2WMQ6wcf-380_4vUu_YNXXQX0DNt52jA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>X‐ray reflection properties of annealed silicon single crystals</title><source>AIP Digital Archive</source><source>AIP Journals (American Institute of Physics)</source><creator>Zaumseil, P. ; Winter, U. ; Joksch, St ; Freund, A. K.</creator><creatorcontrib>Zaumseil, P. ; Winter, U. ; Joksch, St ; Freund, A. K.</creatorcontrib><description>We present a series of x‐ray reflectivity measurements performed on annealed Czochralski grown silicon (ACS) crystals in the energy range E<50 keV using sealed tube sources. To analyze the origin of the enhanced reflectivity of this material compared to perfect, FZ‐grown silicon, double and triple crystal diffractometer measurements were carried out. The results are discussed with regard to the application of ACS for monochromatization of synchrotron radiation in the mentioned energy range.</description><identifier>ISSN: 0034-6748</identifier><identifier>EISSN: 1089-7623</identifier><identifier>DOI: 10.1063/1.1143775</identifier><identifier>CODEN: RSINAK</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Alloys ; Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Structure of solids and liquids; crystallography ; Structure of specific crystalline solids</subject><ispartof>Review of Scientific Instruments, 1992-01, Vol.63 (1), p.907-910</ispartof><rights>American Institute of Physics</rights><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c326t-cc2aa677a8a58b8d856cffc287e5e87064e7d598e42e38ad0ac3c24552febcba3</citedby><cites>FETCH-LOGICAL-c326t-cc2aa677a8a58b8d856cffc287e5e87064e7d598e42e38ad0ac3c24552febcba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/rsi/article-lookup/doi/10.1063/1.1143775$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,776,778,780,785,786,791,1553,4036,4037,23911,23912,25120,27903,27904,76129,76136</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5274640$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zaumseil, P.</creatorcontrib><creatorcontrib>Winter, U.</creatorcontrib><creatorcontrib>Joksch, St</creatorcontrib><creatorcontrib>Freund, A. K.</creatorcontrib><title>X‐ray reflection properties of annealed silicon single crystals</title><title>Review of Scientific Instruments</title><description>We present a series of x‐ray reflectivity measurements performed on annealed Czochralski grown silicon (ACS) crystals in the energy range E<50 keV using sealed tube sources. To analyze the origin of the enhanced reflectivity of this material compared to perfect, FZ‐grown silicon, double and triple crystal diffractometer measurements were carried out. The results are discussed with regard to the application of ACS for monochromatization of synchrotron radiation in the mentioned energy range.</description><subject>Alloys</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Structure of specific crystalline solids</subject><issn>0034-6748</issn><issn>1089-7623</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNp9j8tKA0EQRRtRMEYX_sEs3ChM7Hd3liH4AsGNgruhUlMtLePM0D0I2fkJfqNf4oQEXWlt7qJOXeowdir4THCrLsVMCK2cM3tsIrifl85Ktc8mnCtdWqf9ITvK-ZWPY4SYsMXz18dngnWRKDSEQ-zaok9dT2mIlIsuFNC2BA3VRY5NxHGdY_vSUIFpnQdo8jE7CGPQyS6n7On66nF5W94_3NwtF_clKmmHElECWOfAg_ErX3tjMQSU3pEh77jV5Goz96QlKQ81B1QotTEy0ApXoKbsfNuLqct5fLfqU3yDtK4Erzbulah27iN7tmV7yAhNSNBizD8HRjptNR-xiy2WMQ6wcf-380_4vUu_YNXXQX0DNt52jA</recordid><startdate>199201</startdate><enddate>199201</enddate><creator>Zaumseil, P.</creator><creator>Winter, U.</creator><creator>Joksch, St</creator><creator>Freund, A. K.</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>199201</creationdate><title>X‐ray reflection properties of annealed silicon single crystals</title><author>Zaumseil, P. ; Winter, U. ; Joksch, St ; Freund, A. K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c326t-cc2aa677a8a58b8d856cffc287e5e87064e7d598e42e38ad0ac3c24552febcba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Alloys</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Structure of specific crystalline solids</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zaumseil, P.</creatorcontrib><creatorcontrib>Winter, U.</creatorcontrib><creatorcontrib>Joksch, St</creatorcontrib><creatorcontrib>Freund, A. K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Review of Scientific Instruments</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zaumseil, P.</au><au>Winter, U.</au><au>Joksch, St</au><au>Freund, A. K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>X‐ray reflection properties of annealed silicon single crystals</atitle><jtitle>Review of Scientific Instruments</jtitle><date>1992-01</date><risdate>1992</risdate><volume>63</volume><issue>1</issue><spage>907</spage><epage>910</epage><pages>907-910</pages><issn>0034-6748</issn><eissn>1089-7623</eissn><coden>RSINAK</coden><abstract>We present a series of x‐ray reflectivity measurements performed on annealed Czochralski grown silicon (ACS) crystals in the energy range E<50 keV using sealed tube sources. To analyze the origin of the enhanced reflectivity of this material compared to perfect, FZ‐grown silicon, double and triple crystal diffractometer measurements were carried out. The results are discussed with regard to the application of ACS for monochromatization of synchrotron radiation in the mentioned energy range.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1143775</doi><tpages>4</tpages></addata></record> |
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identifier | ISSN: 0034-6748 |
ispartof | Review of Scientific Instruments, 1992-01, Vol.63 (1), p.907-910 |
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language | eng |
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source | AIP Digital Archive; AIP Journals (American Institute of Physics) |
subjects | Alloys Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Structure of solids and liquids crystallography Structure of specific crystalline solids |
title | X‐ray reflection properties of annealed silicon single crystals |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T05%3A37%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=X%E2%80%90ray%20reflection%20properties%20of%20annealed%20silicon%20single%20crystals&rft.jtitle=Review%20of%20Scientific%20Instruments&rft.au=Zaumseil,%20P.&rft.date=1992-01&rft.volume=63&rft.issue=1&rft.spage=907&rft.epage=910&rft.pages=907-910&rft.issn=0034-6748&rft.eissn=1089-7623&rft.coden=RSINAK&rft_id=info:doi/10.1063/1.1143775&rft_dat=%3Cscitation_cross%3Ersi%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c326t-cc2aa677a8a58b8d856cffc287e5e87064e7d598e42e38ad0ac3c24552febcba3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |