Ion implantation doping and isolation of GaN

• Published in: Applied physics letters 1995-09, Vol.67 (10), p.1435-1437
• Main Authors: Pearton, S. J., Vartuli, C. B., Zolper, J. C., Yuan, C., Stall, R. A.
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.114518

N- and p-type regions have been produced in GaN using Si+ and Mg+/P+ implantation, respectively, and subsequent annealing at ∼1100 °C. Carrier activation percentages of 93% for Si and 62% for Mg were obtained for implant doses of 5×1014 cm−2 of each element. Conversely, highly resistive regions (≳5×109 Ω/⧠) can be produced in initially n- or p- type GaN by N+ implantation and subsequent annealing at ∼750 °C. The activation energy of the deep states controlling the resistivity of these implant-isolated materials is in the range 0.8–0.9 eV. These process modules are applicable to the fabrication of a variety of different GaN-based electronic and photonic devices.